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    Nanocrystalline silicon fabrication by conventional plasma enhanced chemical vapor deposition for bottom gate thin film transistor

    New search for: Kim, S. W.
    New search for: Choi, D. L.

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    Nanocrystalline silicon fabrication by conventional plasma enhanced chemical vapor deposition for bottom gate thin film transistor

    New search for: Kim, S. W.
    New search for: Choi, D. L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Nanocrystalline silicon fabrication by conventional plasma enhanced chemical vapor deposition for bottom gate thin film transistor

    New search for: Kim, S. W.
    New search for: Choi, D. L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Nanocrystalline silicon fabrication by conventional plasma enhanced chemical vapor deposition for bottom gate thin film transistor

    Contributors:

    Kim, S. W. (author) / Choi, D. L. (author)

    Published in:

    MATERIALS LETTERS ; 64 ; 1975-1977

    Publication date:

    2010-01-01

    Size:

    3 pages

    ISSN:

    0167-577X

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1105 / 530

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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