A platform for research: civil engineering, architecture and urbanism
Formation of GaAs1-xNx nanofilm on GaAs by low energy N2^+ implantation
Formation of GaAs1-xNx nanofilm on GaAs by low energy N2^+ implantation
Formation of GaAs1-xNx nanofilm on GaAs by low energy N2^+ implantation
Mikoushkin, V. M. (author)
APPLIED SURFACE SCIENCE ; 257 ; 4941-4944
2011-01-01
4 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x10%) saturable absorber quantum wells
British Library Online Contents | 2008
|British Library Online Contents | 2008
|Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE
British Library Online Contents | 2001
|Electronic structure of GaAs1-xNx alloys
British Library Online Contents | 2001
|British Library Online Contents | 2007
|