A platform for research: civil engineering, architecture and urbanism
Erratum to ''GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride'' [Appl. Surf. Sci. 256 (2010) 7434-7437]
Erratum to ''GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride'' [Appl. Surf. Sci. 256 (2010) 7434-7437]
Erratum to ''GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride'' [Appl. Surf. Sci. 256 (2010) 7434-7437]
Bosund, M. (author) / Mattila, P. (author) / Aierken, A. (author) / Hakkarainen, T. (author) / Koskenvaara, H. (author) / Sopanen, M. (author) / Airaksinen, V. M. (author) / Lipsanen, H. (author)
APPLIED SURFACE SCIENCE ; 257 ; 2412
2011-01-01
2412 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
British Library Online Contents | 2010
|Passivation of GaAs surface by atomic-layer-deposited titanium nitride
British Library Online Contents | 2008
|Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR-CVD plasma
British Library Online Contents | 2008
|British Library Online Contents | 2012
|British Library Online Contents | 1995
|