Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR-CVD plasma: Fid-Bau Portal

Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR-CVD plasma

Manera, L. T. / Zoccal, L. B. / Diniz, J. A. / Tatsch, P. J. / Doi, I.

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Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR-CVD plasma

Manera, L. T. / Zoccal, L. B. / Diniz, J. A. / Tatsch, P. J. / Doi, I.

Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR-CVD plasma

Manera, L. T. / Zoccal, L. B. / Diniz, J. A. / Tatsch, P. J. / Doi, I.

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Check availability in my library

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Document information

Title:

Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR-CVD plasma

Contributors:

Manera, L. T. (author) / Zoccal, L. B. (author) / Diniz, J. A. (author) / Tatsch, P. J. (author) / Doi, I. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6063-6066

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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