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    Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

    New search for: Ohshima, T.
    New search for: Iwamoto, N.
    New search for: Onoda, S.
    New search for: Makino, T.
    New search for: Nozaki, S.
    New search for: Kojima, K.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

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    Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

    New search for: Ohshima, T.
    New search for: Iwamoto, N.
    New search for: Onoda, S.
    New search for: Makino, T.
    New search for: Nozaki, S.
    New search for: Kojima, K.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

    New search for: Ohshima, T.
    New search for: Iwamoto, N.
    New search for: Onoda, S.
    New search for: Makino, T.
    New search for: Nozaki, S.
    New search for: Kojima, K.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

    Contributors:

    Ohshima, T. (author) / Iwamoto, N. (author) / Onoda, S. (author) / Makino, T. (author) / Nozaki, S. (author) / Kojima, K. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

    Published in:

    Silicon Carbide and Related Materials 2010 ; 362-365

    MATERIALS SCIENCE FORUM ; 679/680

    Publication date:

    2011-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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