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Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
Yoshikawa, M. (author) / Saitoh, K. (author) / Ohshima, T. (author) / Itoh, H. (author) / Nashiyama, I. (author) / Takahashi, Y. (author) / Ohnishi, K. (author) / Okumura, H. (author) / Yoshida, S. (author)
MATERIALS SCIENCE FORUM ; 264/268 ; 1017-1020
1998-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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