Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays

    New search for: Hishiki, S.
    New search for: Iwamoto, N.
    New search for: Ohshima, T.
    New search for: Itoh, H.
    New search for: Kojima, K.
    New search for: Kawano, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays

    New search for: Hishiki, S.
    New search for: Iwamoto, N.
    New search for: Ohshima, T.
    New search for: Itoh, H.
    New search for: Kojima, K.
    New search for: Kawano, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays

    New search for: Hishiki, S.
    New search for: Iwamoto, N.
    New search for: Ohshima, T.
    New search for: Itoh, H.
    New search for: Kojima, K.
    New search for: Kawano, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays

    Contributors:

    Hishiki, S. (author) / Iwamoto, N. (author) / Ohshima, T. (author) / Itoh, H. (author) / Kojima, K. (author) / Kawano, K. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 600/603 ; 707-710

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

    Hishiki, S. / Reshanov, S.A. / Ohshima, T. et al. | British Library Online Contents | 2009

    Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

    Ohshima, T. / Lee, K. K. / Ohi, A. et al. | British Library Online Contents | 2002

    Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

    Ohshima, T. / Iwamoto, N. / Onoda, S. et al. | British Library Online Contents | 2011

    Mass Spectrometric Thermal Analysis of Polyethylene-Aluminum Composite Irradiated with gamma-Rays

    Muinov, T. M. / Gabaidulina, L. I. | British Library Online Contents | 1992

    Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth

    Terashima, K. / Tanabe, A. / Nakagawa, T. et al. | British Library Online Contents | 2008

    Back to top