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Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
Umeda, T. (author) / Esaki, K. (author) / Kosugi, R. (author) / Fukuda, K. (author) / Morishita, N. (author) / Ohshima, T. (author) / Isoya, J. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
2011-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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