Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor: Fid-Bau Portal

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor

Umeda, T. / Esaki, K. / Kosugi, R. / Fukuda, K. / Morishita, N. / Ohshima, T. / Isoya, J.

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Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor

Umeda, T. / Esaki, K. / Kosugi, R. / Fukuda, K. / Morishita, N. / Ohshima, T. / Isoya, J.

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor

Umeda, T. / Esaki, K. / Kosugi, R. / Fukuda, K. / Morishita, N. / Ohshima, T. / Isoya, J.

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Titel:

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor

Beteiligte:

Umeda, T. (Autor:in) / Esaki, K. (Autor:in) / Kosugi, R. (Autor:in) / Fukuda, K. (Autor:in) / Morishita, N. (Autor:in) / Ohshima, T. (Autor:in) / Isoya, J. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

Erschienen in:

Silicon Carbide and Related Materials 2010 ; 370-373

MATERIALS SCIENCE FORUM ; 679/680

Erscheinungsdatum:

01.01.2011

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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