Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs: Fid-Bau Portal

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

Veliadis, V. / Stewart, E.J. / Hearne, H. / McNutt, T. / Chang, W. / Snook, M. / Lelis, A.J. / Scozzie, C.

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Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

Veliadis, V. / Stewart, E.J. / Hearne, H. / McNutt, T. / Chang, W. / Snook, M. / Lelis, A.J. / Scozzie, C.

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

Veliadis, V. / Stewart, E.J. / Hearne, H. / McNutt, T. / Chang, W. / Snook, M. / Lelis, A.J. / Scozzie, C.

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Title:

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

Contributors:

Veliadis, V. (author) / Stewart, E.J. (author) / Hearne, H. (author) / McNutt, T. (author) / Chang, W. (author) / Snook, M. (author) / Lelis, A.J. (author) / Scozzie, C. (author) / Monakhov, E.V. / Hornos, T.

Published in:

Silicon Carbide and Related Materials 2010 ; 617-620

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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