Fabrication of P-Channel MOSFETs on 4H-SiC C-Face: Fid-Bau Portal

Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Okamoto, M. / Iijima, M. / Yatsuo, T. / Nagano, T. / Fukuda, K. / Okumura, H.

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Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Okamoto, M. / Iijima, M. / Yatsuo, T. / Nagano, T. / Fukuda, K. / Okumura, H.

Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Okamoto, M. / Iijima, M. / Yatsuo, T. / Nagano, T. / Fukuda, K. / Okumura, H.

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Check availability in my library

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Title:

Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Contributors:

Okamoto, M. (author) / Iijima, M. (author) / Yatsuo, T. (author) / Nagano, T. (author) / Fukuda, K. (author) / Okumura, H. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

Published in:

Silicon Carbide and Related Materials 2010 ; 653-656

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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