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Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth

Terashima, K. / Tanabe, A. / Nakagawa, T. / Mori, K. / Ikarashi, T. / Nakatsuru, J. / Date, H. / Ikemoto, M. / Tatsumi, T.

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Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth

Terashima, K. / Tanabe, A. / Nakagawa, T. / Mori, K. / Ikarashi, T. / Nakatsuru, J. / Date, H. / Ikemoto, M. / Tatsumi, T.

Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth

Terashima, K. / Tanabe, A. / Nakagawa, T. / Mori, K. / Ikarashi, T. / Nakatsuru, J. / Date, H. / Ikemoto, M. / Tatsumi, T.

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Document information

Title:

Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth

Contributors:

Terashima, K. (author) / Tanabe, A. (author) / Nakagawa, T. (author) / Mori, K. (author) / Ikarashi, T. (author) / Nakatsuru, J. (author) / Date, H. (author) / Ikemoto, M. (author) / Tatsumi, T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6165-6167

Publication date:

2008-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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