1200 V SiC BJTs with Low V~C~E~S~A~T and High Temperature Capability: Fid-Bau Portal

1200 V SiC BJTs with Low V~C~E~S~A~T and High Temperature Capability

Domeij, M. / Lindgren, A. / Zaring, C. / Konstantinov, A.O. / Gumaelius, K. / Grenell, H. / Keri, I. / Svedberg, J.O. / Reimark, M.

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1200 V SiC BJTs with Low V~C~E~S~A~T and High Temperature Capability

Domeij, M. / Lindgren, A. / Zaring, C. / Konstantinov, A.O. / Gumaelius, K. / Grenell, H. / Keri, I. / Svedberg, J.O. / Reimark, M.

1200 V SiC BJTs with Low V~C~E~S~A~T and High Temperature Capability

Domeij, M. / Lindgren, A. / Zaring, C. / Konstantinov, A.O. / Gumaelius, K. / Grenell, H. / Keri, I. / Svedberg, J.O. / Reimark, M.

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Title:

1200 V SiC BJTs with Low V~C~E~S~A~T and High Temperature Capability

Contributors:

Domeij, M. (author) / Lindgren, A. (author) / Zaring, C. (author) / Konstantinov, A.O. (author) / Gumaelius, K. (author) / Grenell, H. (author) / Keri, I. (author) / Svedberg, J.O. (author) / Reimark, M. (author) / Monakhov, E.V.

Published in:

Silicon Carbide and Related Materials 2010 ; 686-689

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Domeij, M. / Konstantinov, A. / Lindgren, A. et al. | British Library Online Contents | 2012

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