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High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

Zhang, J.H. / Zhao, J.H. / Wang, X.H. / Li, X.Q. / Fursin, L. / Alexandrov, P. / Gagliardi, M.A. / Lange, M. / Dries, C.

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High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

Zhang, J.H. / Zhao, J.H. / Wang, X.H. / Li, X.Q. / Fursin, L. / Alexandrov, P. / Gagliardi, M.A. / Lange, M. / Dries, C.

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

Zhang, J.H. / Zhao, J.H. / Wang, X.H. / Li, X.Q. / Fursin, L. / Alexandrov, P. / Gagliardi, M.A. / Lange, M. / Dries, C.

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Title:

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

Contributors:

Zhang, J.H. (author) / Zhao, J.H. (author) / Wang, X.H. (author) / Li, X.Q. (author) / Fursin, L. (author) / Alexandrov, P. (author) / Gagliardi, M.A. (author) / Lange, M. (author) / Dries, C. (author) / Monakhov, E.V.

Published in:

Silicon Carbide and Related Materials 2010 ; 710-713

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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