A platform for research: civil engineering, architecture and urbanism
Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks
Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks
Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks
Paskaleva, A. (author) / Tapajna, M. (author) / Dobrocka, E. (author) / Husekova, K. (author) / Atanassova, E. (author) / Frohlich, K. (author)
APPLIED SURFACE SCIENCE ; 257 ; 7876-7880
2011-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2012
|Effect of Ti doping on Ta2O5 stacks with Ru and Al gates
British Library Online Contents | 2008
|Influence of Hf doping on interfacial layers of Ta2O5 stacks studied by ellipsometry
British Library Online Contents | 2013
|Effects of Ta2O5 on microwave dielectric properties of BiNbO4 ceramics
British Library Online Contents | 2003
|Laser sintering of transparent Ta2O5 dielectric ceramics
British Library Online Contents | 2006
|