Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing: Fid-Bau Portal

Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing

Yang, S. / Zhang, W. / Chen, J. / Zhou, Z. / Ai, Z. / Guo, L. / Liu, C. / Du, H.

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Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing

Yang, S. / Zhang, W. / Chen, J. / Zhou, Z. / Ai, Z. / Guo, L. / Liu, C. / Du, H.

Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing

Yang, S. / Zhang, W. / Chen, J. / Zhou, Z. / Ai, Z. / Guo, L. / Liu, C. / Du, H.

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Check availability in my library

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Document information

Title:

Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing

Contributors:

Yang, S. (author) / Zhang, W. (author) / Chen, J. (author) / Zhou, Z. (author) / Ai, Z. (author) / Guo, L. (author) / Liu, C. (author) / Du, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 257 ; 8465-8468

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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