Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Epitaxial Growth of 4H-SiC with High Growth Rate Using CH~3Cl and SiCl~4 Chlorinated Growth Precursors

    New search for: Kotamraju, S.P.
    New search for: Krishnan, B.
    New search for: Koshka, Y.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Epitaxial Growth of 4H-SiC with High Growth Rate Using CH~3Cl and SiCl~4 Chlorinated Growth Precursors

    New search for: Kotamraju, S.P.
    New search for: Krishnan, B.
    New search for: Koshka, Y.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Epitaxial Growth of 4H-SiC with High Growth Rate Using CH~3Cl and SiCl~4 Chlorinated Growth Precursors

    New search for: Kotamraju, S.P.
    New search for: Krishnan, B.
    New search for: Koshka, Y.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Epitaxial Growth of 4H-SiC with High Growth Rate Using CH~3Cl and SiCl~4 Chlorinated Growth Precursors

    Contributors:

    Kotamraju, S.P. (author) / Krishnan, B. (author) / Koshka, Y. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.

    Published in:

    Silicon Carbide and Related Materials 2009 ; 103-106

    MATERIALS SCIENCE FORUM ; 645/648

    Publication date:

    2010-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl~4

    Eichfeld, S.M. / Shen, H. / Eichfeld, C.M. et al. | British Library Online Contents | 2011

    Use of SiCl~4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

    Kotamraju, S.P. / Krishnan, B. / Melnychuk, G. et al. | British Library Online Contents | 2010

    Low-Temperature Homoepitaxial Growth with SiCl~4 Precursor Compared to HCl Assisted SiH~4-Based Growth

    Kotamraju, S.P. / Melnychuk, G. / Koshka, Y. | British Library Online Contents | 2009

    Growth of silicon nanowires via nickel/SiCl~4 vapor-liquid-solid reaction

    Wang, N. / Zhang, Y. / Zhu, J. | British Library Online Contents | 2001

    Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors

    Boo, J.-H. / Lee, S.-B. / Ustin, S. A. et al. | British Library Online Contents | 1998

    Back to top