Formation of a-Si1-xCx:H and nc-SiC films grown by HWCVD under different process pressure: Fid-Bau Portal

Formation of a-Si1-xCx:H and nc-SiC films grown by HWCVD under different process pressure

Wu, T. / Shen, H. / Cheng, B. / Pan, Y. / Liu, B. / Shen, J.

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Formation of a-Si1-xCx:H and nc-SiC films grown by HWCVD under different process pressure

Wu, T. / Shen, H. / Cheng, B. / Pan, Y. / Liu, B. / Shen, J.

Formation of a-Si1-xCx:H and nc-SiC films grown by HWCVD under different process pressure

Wu, T. / Shen, H. / Cheng, B. / Pan, Y. / Liu, B. / Shen, J.

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Check availability in my library

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Document information

Title:

Formation of a-Si1-xCx:H and nc-SiC films grown by HWCVD under different process pressure

Contributors:

Wu, T. (author) / Shen, H. (author) / Cheng, B. (author) / Pan, Y. (author) / Liu, B. (author) / Shen, J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 258 ; 999-1003

Publication date:

2011-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Structural and optical properties of a-Si1-xCx:H grown by plasma enhanced CVD

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Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1-xCx:H films

Wang, Y. / Yue, R. / Li, G. et al. | British Library Online Contents | 2001

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Effect of filament temperature on HWCVD deposited a-SiC:H

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