Tensile strained Ge quantum wells on Si substrate: Post-growth annealing versus low temperature re-growth: Fid-Bau Portal

Tensile strained Ge quantum wells on Si substrate: Post-growth annealing versus low temperature re-growth

Suess, M. J. / Carroll, L. / Sigg, H. / Diaz, A. / Chrastina, D. / Isella, G. / Muller, E. / Spolenak, R.

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Tensile strained Ge quantum wells on Si substrate: Post-growth annealing versus low temperature re-growth

Suess, M. J. / Carroll, L. / Sigg, H. / Diaz, A. / Chrastina, D. / Isella, G. / Muller, E. / Spolenak, R.

Tensile strained Ge quantum wells on Si substrate: Post-growth annealing versus low temperature re-growth

Suess, M. J. / Carroll, L. / Sigg, H. / Diaz, A. / Chrastina, D. / Isella, G. / Muller, E. / Spolenak, R.

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Check availability in my library

Order at Subito €

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Title:

Tensile strained Ge quantum wells on Si substrate: Post-growth annealing versus low temperature re-growth

Contributors:

Suess, M. J. (author) / Carroll, L. (author) / Sigg, H. (author) / Diaz, A. (author) / Chrastina, D. (author) / Isella, G. (author) / Muller, E. (author) / Spolenak, R. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 177 ; 696-699

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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