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Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1-xSnx layer on Ge(001) substrate
Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1-xSnx layer on Ge(001) substrate
Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1-xSnx layer on Ge(001) substrate
Wang, W. (author) / Li, L. (author) / Zhou, Q. (author) / Pan, J. (author) / Zhang, Z. (author) / Tok, E. S. (author) / Yeo, Y. C. (author)
APPLIED SURFACE SCIENCE ; 321 ; 240-244
2014-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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