Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates: Fid-Bau Portal

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Zhang, J. / Chung, G. / Sanchez, E.K. / Loboda, M.J. / Sundaresan, S. / Singh, R.

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Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Zhang, J. / Chung, G. / Sanchez, E.K. / Loboda, M.J. / Sundaresan, S. / Singh, R.

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Zhang, J. / Chung, G. / Sanchez, E.K. / Loboda, M.J. / Sundaresan, S. / Singh, R.

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Check availability in my library

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Document information

Title:

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Contributors:

Zhang, J. (author) / Chung, G. (author) / Sanchez, E.K. (author) / Loboda, M.J. (author) / Sundaresan, S. (author) / Singh, R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 137-140

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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