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Buried Selective Growth of p-Doped SiC by VLS Epitaxy

Carole, D. / Berckmans, S. / Vo-Ha, A. / Lazar, M. / Tournier, D. / Brosselard, P. / Souliere, V. / Auvray, L. / Ferro, G. / Brylinski, C.

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Buried Selective Growth of p-Doped SiC by VLS Epitaxy

Carole, D. / Berckmans, S. / Vo-Ha, A. / Lazar, M. / Tournier, D. / Brosselard, P. / Souliere, V. / Auvray, L. / Ferro, G. / Brylinski, C.

Buried Selective Growth of p-Doped SiC by VLS Epitaxy

Carole, D. / Berckmans, S. / Vo-Ha, A. / Lazar, M. / Tournier, D. / Brosselard, P. / Souliere, V. / Auvray, L. / Ferro, G. / Brylinski, C.

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Document information

Title:

Buried Selective Growth of p-Doped SiC by VLS Epitaxy

Contributors:

Carole, D. (author) / Berckmans, S. (author) / Vo-Ha, A. (author) / Lazar, M. (author) / Tournier, D. (author) / Brosselard, P. (author) / Souliere, V. (author) / Auvray, L. (author) / Ferro, G. (author) / Brylinski, C. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 169-172

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Takahashi, I. / Nakaji, M. / Kawanishi, H. | British Library Online Contents | 1994

Surface processes of selective growth by atomic layer epitaxy

Isshiki, H. / Aoyagi, Y. / Sugano, T. et al. | British Library Online Contents | 1994

Formation of buried Sb dopant profiles in silicon by pulsed laser epitaxy

Carolissen, R. J. / Knoesen, D. K. / Sinke, W. C. et al. | British Library Online Contents | 1993

Epitaxy growth mechanisms

Pashley, D. W. | British Library Online Contents | 1999

Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy

Nishizawa, J. i. / Kurabayashi, T. / Plotka, P. et al. | British Library Online Contents | 2003