Low Temperature Epitaxy of 3C SiC using Hexamethyldisilane Precursor on Si <111> Substrates: Fid-Bau Portal

Low Temperature Epitaxy of 3C SiC using Hexamethyldisilane Precursor on Si <111> Substrates

Wagner, B. / Oliver, J. / Singh, N.B. / King, M. / McLaughlin, S. / Kahler, D. / Knuteson, D. / Berghmans, A. / Rai, R.

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Low Temperature Epitaxy of 3C SiC using Hexamethyldisilane Precursor on Si <111> Substrates

Wagner, B. / Oliver, J. / Singh, N.B. / King, M. / McLaughlin, S. / Kahler, D. / Knuteson, D. / Berghmans, A. / Rai, R.

Low Temperature Epitaxy of 3C SiC using Hexamethyldisilane Precursor on Si <111> Substrates

Wagner, B. / Oliver, J. / Singh, N.B. / King, M. / McLaughlin, S. / Kahler, D. / Knuteson, D. / Berghmans, A. / Rai, R.

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Document information

Title:

Low Temperature Epitaxy of 3C SiC using Hexamethyldisilane Precursor on Si <111> Substrates

Contributors:

Wagner, B. (author) / Oliver, J. (author) / Singh, N.B. (author) / King, M. (author) / McLaughlin, S. (author) / Kahler, D. (author) / Knuteson, D. (author) / Berghmans, A. (author) / Rai, R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 185-188

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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