Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy: Fid-Bau Portal

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Ivanov, I.G. / Gallstrom, A. / Coble, R. / Devaty, R.P. / Choyke, W.J. / Janzen, E.

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Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Ivanov, I.G. / Gallstrom, A. / Coble, R. / Devaty, R.P. / Choyke, W.J. / Janzen, E.

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Ivanov, I.G. / Gallstrom, A. / Coble, R. / Devaty, R.P. / Choyke, W.J. / Janzen, E.

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Document information

Title:

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Contributors:

Ivanov, I.G. (author) / Gallstrom, A. (author) / Coble, R. (author) / Devaty, R.P. (author) / Choyke, W.J. (author) / Janzen, E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 259-262

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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