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Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by ClF~3 Gas
Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by ClF~3 Gas
Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by ClF~3 Gas
Habuka, H. (author) / Furukawa, K. (author) / Kanai, T. (author) / Kato, T. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 379-382
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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