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Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
Tsuchida, H. (author) / Miyanagi, T. (author) / Kamata, I. (author) / Nakamura, T. (author) / Izumi, K. (author) / Nakayama, K. (author) / Ishii, R. (author) / Asano, K. (author) / Sugawara, Y. (author) / Nipoti, R.
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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