Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length: Fid-Bau Portal

Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length

Zippelius, B. / Hauck, M. / Beljakowa, S. / Weber, H.B. / Krieger, M. / Nagasawa, H. / Uchida, H. / Pensl, G. / Schoner, A.

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Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length

Zippelius, B. / Hauck, M. / Beljakowa, S. / Weber, H.B. / Krieger, M. / Nagasawa, H. / Uchida, H. / Pensl, G. / Schoner, A.

Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length

Zippelius, B. / Hauck, M. / Beljakowa, S. / Weber, H.B. / Krieger, M. / Nagasawa, H. / Uchida, H. / Pensl, G. / Schoner, A.

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Title:

Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length

Contributors:

Zippelius, B. (author) / Hauck, M. (author) / Beljakowa, S. (author) / Weber, H.B. (author) / Krieger, M. (author) / Nagasawa, H. (author) / Uchida, H. (author) / Pensl, G. (author) / Schoner, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 1113-1116

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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