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Design considerations of source and drain regions in nano double gate MOSFETs

Orouji, A. A. / Mashayekhi, H. R. / Charmi, M.

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Design considerations of source and drain regions in nano double gate MOSFETs

Orouji, A. A. / Mashayekhi, H. R. / Charmi, M.

Design considerations of source and drain regions in nano double gate MOSFETs

Orouji, A. A. / Mashayekhi, H. R. / Charmi, M.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Design considerations of source and drain regions in nano double gate MOSFETs

Contributors:

Orouji, A. A. (author) / Mashayekhi, H. R. (author) / Charmi, M. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 15 ; 572-577

Publication date:

2012-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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