Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Simulation of Segmented Double-Gate MOSFETs

    New search for: Reichardt, A.
    New search for: Varga, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Simulation of Segmented Double-Gate MOSFETs

    New search for: Reichardt, A.
    New search for: Varga, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Simulation of Segmented Double-Gate MOSFETs

    New search for: Reichardt, A.
    New search for: Varga, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Simulation of Segmented Double-Gate MOSFETs

    Contributors:

    Reichardt, A. (author) / Varga, G. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 721 ; 325-330

    Publication date:

    2012-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Source engineering in short channel double gate vertical SiGe-MOSFETs

    Mandal, S. K. / Das, S. / Maiti, C. K. | British Library Online Contents | 2005

    Design considerations of source and drain regions in nano double gate MOSFETs

    Orouji, A. A. / Mashayekhi, H. R. / Charmi, M. | British Library Online Contents | 2012

    Water gate segmented water taking device

    FAN WEI / FENG WEITIAN / JIAO CHUJIE | European Patent Office | 2021

    Free access

    Self-Aligned N+ Polysilicon-Gate GaN MOSFETs

    Matocha, K. / Chow, T. P. / Gutmann, R. J. | British Library Online Contents | 2004

    A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All Around MOSFETs

    Djeffal, F. / Abdi, M. A. / Dibi, Z. et al. | British Library Online Contents | 2008

    Back to top