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Source/drain engineering for MOSFETs with embedded-Si:C technology

Itokawa, H. / Yasutake, N. / Kusunoki, N. / Okamoto, S. / Aoki, N. / Mizushima, I.

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Source/drain engineering for MOSFETs with embedded-Si:C technology

Itokawa, H. / Yasutake, N. / Kusunoki, N. / Okamoto, S. / Aoki, N. / Mizushima, I.

Source/drain engineering for MOSFETs with embedded-Si:C technology

Itokawa, H. / Yasutake, N. / Kusunoki, N. / Okamoto, S. / Aoki, N. / Mizushima, I.

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Access via TIB

Check availability in my library

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Document information

Title:

Source/drain engineering for MOSFETs with embedded-Si:C technology

Contributors:

Itokawa, H. (author) / Yasutake, N. (author) / Kusunoki, N. (author) / Okamoto, S. (author) / Aoki, N. (author) / Mizushima, I. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6135-6139

Publication date:

2008-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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