A platform for research: civil engineering, architecture and urbanism
A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All Around MOSFETs
A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All Around MOSFETs
A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All Around MOSFETs
Djeffal, F. (author) / Abdi, M. A. (author) / Dibi, Z. (author) / Chahdi, M. (author) / Benhaya, A. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 147 ; 239-244
2008-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Simulation of Segmented Double-Gate MOSFETs
British Library Online Contents | 2012
|Source engineering in short channel double gate vertical SiGe-MOSFETs
British Library Online Contents | 2005
|Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
British Library Online Contents | 2004
|Design considerations of source and drain regions in nano double gate MOSFETs
British Library Online Contents | 2012
|