Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers: Fid-Bau Portal

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Mahadik, N.A. / Stahlbush, R.E. / Nath, A. / Tadjer, M.J. / Imhoff, E.A. / Feygelson, B.N. / Nipoti, R.

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Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Mahadik, N.A. / Stahlbush, R.E. / Nath, A. / Tadjer, M.J. / Imhoff, E.A. / Feygelson, B.N. / Nipoti, R.

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Mahadik, N.A. / Stahlbush, R.E. / Nath, A. / Tadjer, M.J. / Imhoff, E.A. / Feygelson, B.N. / Nipoti, R.

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Title:

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Contributors:

Mahadik, N.A. (author) / Stahlbush, R.E. (author) / Nath, A. (author) / Tadjer, M.J. (author) / Imhoff, E.A. (author) / Feygelson, B.N. (author) / Nipoti, R. (author) / Okumura, H. / Harima, H. / Kimoto, T.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 324-327

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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