Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition: Fid-Bau Portal

Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

Ozturk, M. K. / Arslan, E. / Kars, I. / Ozcelik, S. / Ozbay, E.

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Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

Ozturk, M. K. / Arslan, E. / Kars, I. / Ozcelik, S. / Ozbay, E.

Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

Ozturk, M. K. / Arslan, E. / Kars, I. / Ozcelik, S. / Ozbay, E.

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Check availability in my library

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Document information

Title:

Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

Contributors:

Ozturk, M. K. (author) / Arslan, E. (author) / Kars, I. (author) / Ozcelik, S. (author) / Ozbay, E. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 83-88

Publication date:

2013-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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