Investigation of Strain and Thin Film Relaxation in Ge~xSi~1~-~x/Si Strained-Layer Superlattice by Dark-Field Electron Holography: Fid-Bau Portal

Investigation of Strain and Thin Film Relaxation in Ge~xSi~1~-~x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

Wang, Z. / Yao, Y. / He, X. / Yang, Y. / Gu, L. / Wang, Y. / Duan, X.

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Investigation of Strain and Thin Film Relaxation in Ge~xSi~1~-~x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

Wang, Z. / Yao, Y. / He, X. / Yang, Y. / Gu, L. / Wang, Y. / Duan, X.

Investigation of Strain and Thin Film Relaxation in Ge~xSi~1~-~x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

Wang, Z. / Yao, Y. / He, X. / Yang, Y. / Gu, L. / Wang, Y. / Duan, X.

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Document information

Title:

Investigation of Strain and Thin Film Relaxation in Ge~xSi~1~-~x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

Contributors:

Wang, Z. (author) / Yao, Y. (author) / He, X. (author) / Yang, Y. (author) / Gu, L. (author) / Wang, Y. (author) / Duan, X. (author)

Published in:

Special Issue on Crystallographic Orientation Distribution and Related Properties in Advanced Materials III ; 2019-2022

MATERIALS TRANSACTIONS ; 53

Publication date:

2012-01-01

Size:

4 pages

ISSN:

1345-9678

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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