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Effect of electric field on doped amorphous silicon thin films during Ni induced lateral crystallization

Ahn, J. S. / Kim, D. k. / Joo, S. K.

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Effect of electric field on doped amorphous silicon thin films during Ni induced lateral crystallization

Ahn, J. S. / Kim, D. k. / Joo, S. K.

Effect of electric field on doped amorphous silicon thin films during Ni induced lateral crystallization

Ahn, J. S. / Kim, D. k. / Joo, S. K.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

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Document information

Title:

Effect of electric field on doped amorphous silicon thin films during Ni induced lateral crystallization

Contributors:

Ahn, J. S. (author) / Kim, D. k. (author) / Joo, S. K. (author)

Published in:

MATERIALS LETTERS ; 93 ; 233-236

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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Choi, S. H. / Kim, Y. B. / Wang, Y. H. et al. | British Library Online Contents | 2005