Preparation by molecular beam epitaxy and atomic layer molecular beam epitaxy and characterization of InAs layers 1 monolayer thick in GaAs-based structures

Ferrari, C. / Bocchi, C. / Bosacchi, A. et al. | British Library Online Contents | 1994

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Ruterana, P. / Vermaut, P. / Potin, V. et al. | British Library Online Contents | 1997

Investigation of whisker defects on molecular beam epitaxy grown GaAs layers

Kadhim, N. J. / Mukherjee, D. | British Library Online Contents | 1996

Strain Relaxation in (CdMg)Te Layers Grown by Molecular Beam Epitaxy

Heinke, H. / Fischer, F. / Waag, A. et al. | British Library Online Contents | 1995

Investigation of ripple defects on molecular beam epitaxy grown GaAs layers

Kadhim, N. J. / Mukherjee, D. / Mehta, M. | British Library Online Contents | 1993