Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide: Fid-Bau Portal

Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T.

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Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T.

Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T.

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Check availability in my library

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Document information

Title:

Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

Contributors:

Yano, H. (author) / Hatayama, T. (author) / Uraoka, Y. (author) / Fuyuki, T. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 971-974

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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