Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes: Fid-Bau Portal

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Nguyen, D.M. / Huang, R. / Phung, L.V. / Planson, D. / Berthou, M. / Godignon, P. / Vergne, B. / Brosselard, P.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Nguyen, D.M. / Huang, R. / Phung, L.V. / Planson, D. / Berthou, M. / Godignon, P. / Vergne, B. / Brosselard, P.

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Nguyen, D.M. / Huang, R. / Phung, L.V. / Planson, D. / Berthou, M. / Godignon, P. / Vergne, B. / Brosselard, P.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Contributors:

Nguyen, D.M. (author) / Huang, R. (author) / Phung, L.V. (author) / Planson, D. (author) / Berthou, M. (author) / Godignon, P. (author) / Vergne, B. (author) / Brosselard, P. (author) / Lebedev, A.A. / Davydov, S.Y.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 609-612

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Weiss, R. / Frey, L. / Ryssel, H. | British Library Online Contents | 2001

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

Wang, S. R. / Raynaud, C. / Planson, D. et al. | British Library Online Contents | 2003

Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes

Sankin, I. / Draper, W. A. / Merrett, J. N. et al. | British Library Online Contents | 2004

Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination

Zhang, Q. / Madangarli, V. / Tarplee, M. et al. | British Library Online Contents | 2000

Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination Extension

Raynaud, C. / Lazar, M. / Planson, D. et al. | British Library Online Contents | 2004