Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination Extension: Fid-Bau Portal

Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination Extension

Raynaud, C. / Lazar, M. / Planson, D. / Chante, J. P. / Sassi, Z.

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Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination Extension

Raynaud, C. / Lazar, M. / Planson, D. / Chante, J. P. / Sassi, Z.

Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination Extension

Raynaud, C. / Lazar, M. / Planson, D. / Chante, J. P. / Sassi, Z.

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Title:

Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination Extension

Contributors:

Raynaud, C. (author) / Lazar, M. (author) / Planson, D. (author) / Chante, J. P. (author) / Sassi, Z. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1033-1036

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Wang, S. R. / Raynaud, C. / Planson, D. et al. | British Library Online Contents | 2003

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