Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography: Fid-Bau Portal

Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. / Ohshima, H. / Sekine, M. / Momose, K. / Sato, T. / Kitabatake, M.

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Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. / Ohshima, H. / Sekine, M. / Momose, K. / Sato, T. / Kitabatake, M.

Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. / Ohshima, H. / Sekine, M. / Momose, K. / Sato, T. / Kitabatake, M.

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Title:

Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography

Contributors:

Yamashita, T. (author) / Matsuhata, H. (author) / Miyasaka, Y. (author) / Ohshima, H. (author) / Sekine, M. (author) / Momose, K. (author) / Sato, T. (author) / Kitabatake, M. (author) / Lebedev, A.A. / Davydov, S.Y.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 649-652

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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