Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy: Fid-Bau Portal

Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Yamashita, T. / Momose, K. / Muto, D. / Shimodaira, Y. / Yamatake, K. / Miyasaka, Y. / Sato, T. / Matsuhata, H. / Kitabatake, M.

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Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Yamashita, T. / Momose, K. / Muto, D. / Shimodaira, Y. / Yamatake, K. / Miyasaka, Y. / Sato, T. / Matsuhata, H. / Kitabatake, M.

Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Yamashita, T. / Momose, K. / Muto, D. / Shimodaira, Y. / Yamatake, K. / Miyasaka, Y. / Sato, T. / Matsuhata, H. / Kitabatake, M.

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Title:

Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Contributors:

Yamashita, T. (author) / Momose, K. (author) / Muto, D. (author) / Shimodaira, Y. (author) / Yamatake, K. (author) / Miyasaka, Y. (author) / Sato, T. (author) / Matsuhata, H. (author) / Kitabatake, M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 363-366

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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