A platform for research: civil engineering, architecture and urbanism
Development of annealing process for solution-derived high performance InGaZnO thin-film transistors
Development of annealing process for solution-derived high performance InGaZnO thin-film transistors
Development of annealing process for solution-derived high performance InGaZnO thin-film transistors
Kim, K. S. (author) / Lee, S. W. (author) / Oh, S. M. (author) / Cho, W. J. (author)
2013-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors
British Library Online Contents | 2012
|British Library Online Contents | 2017
|Improvements in passivation effect of amorphous InGaZnO thin film transistors
British Library Online Contents | 2014
|Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors
British Library Online Contents | 2015
|British Library Online Contents | 2010
|