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Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

Molle, A. / Dimoulas, A. / Le Lay, G. / Lemme, M.

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Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

Molle, A. / Dimoulas, A. / Le Lay, G. / Lemme, M.

Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

Molle, A. / Dimoulas, A. / Le Lay, G. / Lemme, M.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

Contributors:

Molle, A. (author) / Dimoulas, A. (author) / Le Lay, G. (author) / Lemme, M. (author) / Molle, A. / Dimoulas, A. / Le Lay, G. / Lemme, M.

Published in:

E-MRS 2013 Spring Meeting , Symposium I: The route to post-Si CMOS devices: from high mobility channels to graphene-like 2D nanosheets ; 1-2

APPLIED SURFACE SCIENCE ; 291

Publication date:

2014-01-01

Size:

2 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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