Growth and Characterization of Ge~1~-~xSn~x Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices: Fid-Bau Portal

Growth and Characterization of Ge~1~-~xSn~x Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices

Nakatsuka, O. / Shimura, Y. / Takeuchi, S. / Tsutsui, N. / Zaima, S.

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Growth and Characterization of Ge~1~-~xSn~x Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices

Nakatsuka, O. / Shimura, Y. / Takeuchi, S. / Tsutsui, N. / Zaima, S.

Growth and Characterization of Ge~1~-~xSn~x Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices

Nakatsuka, O. / Shimura, Y. / Takeuchi, S. / Tsutsui, N. / Zaima, S.

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Title:

Growth and Characterization of Ge~1~-~xSn~x Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices

Contributors:

Nakatsuka, O. (author) / Shimura, Y. (author) / Takeuchi, S. (author) / Tsutsui, N. (author) / Zaima, S. (author) / Nie, J.-F. / Morton, A.

Published in:

PRICM7 PART 2 ; 1788-1791

MATERIALS SCIENCE FORUM ; 654/656

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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