Development of RAF Quality 150mm 4H-SiC Wafer: Fid-Bau Portal

Development of RAF Quality 150mm 4H-SiC Wafer

Kondo, H. / Takaba, H. / Yamada, M. / Urakami, Y. / Okamoto, T. / Kobayashi, M. / Masuda, T. / Gunjishima, I. / Shigeto, K. / Ooya, N.

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Development of RAF Quality 150mm 4H-SiC Wafer

Kondo, H. / Takaba, H. / Yamada, M. / Urakami, Y. / Okamoto, T. / Kobayashi, M. / Masuda, T. / Gunjishima, I. / Shigeto, K. / Ooya, N.

Development of RAF Quality 150mm 4H-SiC Wafer

Kondo, H. / Takaba, H. / Yamada, M. / Urakami, Y. / Okamoto, T. / Kobayashi, M. / Masuda, T. / Gunjishima, I. / Shigeto, K. / Ooya, N.

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Document information

Title:

Development of RAF Quality 150mm 4H-SiC Wafer

Contributors:

Kondo, H. (author) / Takaba, H. (author) / Yamada, M. (author) / Urakami, Y. (author) / Okamoto, T. (author) / Kobayashi, M. (author) / Masuda, T. (author) / Gunjishima, I. (author) / Shigeto, K. (author) / Ooya, N. (author)

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 17-21

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

5 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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