Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers: Fid-Bau Portal

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers

Dong, L. / Sun, G.S. / Yu, J. / Yan, G.G. / Zhao, W.S. / Wang, L. / Zhang, X.H. / Li, X.G. / Wang, Z.G.

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Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers

Dong, L. / Sun, G.S. / Yu, J. / Yan, G.G. / Zhao, W.S. / Wang, L. / Zhang, X.H. / Li, X.G. / Wang, Z.G.

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers

Dong, L. / Sun, G.S. / Yu, J. / Yan, G.G. / Zhao, W.S. / Wang, L. / Zhang, X.H. / Li, X.G. / Wang, Z.G.

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Document information

Title:

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers

Contributors:

Dong, L. (author) / Sun, G.S. (author) / Yu, J. (author) / Yan, G.G. (author) / Zhao, W.S. (author) / Wang, L. (author) / Zhang, X.H. (author) / Li, X.G. (author) / Wang, Z.G. (author) / Okumura, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 354-357

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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