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Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001) Si faces
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001) Si faces
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001) Si faces
Sun, G. S. (author) / Liu, X. F. (author) / Gong, Q. C. (author) / Wang, L. (author) / Zhao, W. S. (author) / Li, J. Y. (author) / Zeng, Y. P. (author) / Li, J. M. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 275-278
2006-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
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