Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors: Fid-Bau Portal

Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

Veliadis, V. / Hearne, H. / Stewart, E.J. / Caldwell, J.D. / Snook, M. / McNutt, T. / Potyraj, P. / Scozzie, C.J.

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Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

Veliadis, V. / Hearne, H. / Stewart, E.J. / Caldwell, J.D. / Snook, M. / McNutt, T. / Potyraj, P. / Scozzie, C.J.

Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

Veliadis, V. / Hearne, H. / Stewart, E.J. / Caldwell, J.D. / Snook, M. / McNutt, T. / Potyraj, P. / Scozzie, C.J.

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Title:

Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

Contributors:

Veliadis, V. (author) / Hearne, H. (author) / Stewart, E.J. (author) / Caldwell, J.D. (author) / Snook, M. (author) / McNutt, T. (author) / Potyraj, P. (author) / Scozzie, C.J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 719-722

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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