Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs: Fid-Bau Portal

Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs

Ryu, S.H. / Husna, F. / Haney, S.K. / Zhang, Q.C. / Stahlbush, R.E. / Agarwal, A.

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Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs

Ryu, S.H. / Husna, F. / Haney, S.K. / Zhang, Q.C. / Stahlbush, R.E. / Agarwal, A.

Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs

Ryu, S.H. / Husna, F. / Haney, S.K. / Zhang, Q.C. / Stahlbush, R.E. / Agarwal, A.

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Title:

Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs

Contributors:

Ryu, S.H. (author) / Husna, F. (author) / Haney, S.K. (author) / Zhang, Q.C. (author) / Stahlbush, R.E. (author) / Agarwal, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 1127-1130

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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