Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N~2O Nitridation: Fid-Bau Portal

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N~2O Nitridation

Suzuki, T. / Senzaki, J. / Hatakeyama, T. / Fukuda, K. / Shinohe, T. / Arai, K.

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Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N~2O Nitridation

Suzuki, T. / Senzaki, J. / Hatakeyama, T. / Fukuda, K. / Shinohe, T. / Arai, K.

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N~2O Nitridation

Suzuki, T. / Senzaki, J. / Hatakeyama, T. / Fukuda, K. / Shinohe, T. / Arai, K.

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Check availability in my library

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Document information

Title:

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N~2O Nitridation

Contributors:

Suzuki, T. (author) / Senzaki, J. (author) / Hatakeyama, T. (author) / Fukuda, K. (author) / Shinohe, T. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 557-560

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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